Silicon Heterojunction Solar Cells with Cu2O:N as p-type Layer

被引：0

作者：

Kim, Jinwoo ^{[1
]}

Takiguchi, Yuki ^{[2
]}

Nakada, Kazuyoshi ^{[1
]}

Miyajima, Shinsuke ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

photovoltaic cells; silicon; TRANSITION-METAL OXIDES; HOLE-SELECTIVE CONTACT; DOPANT-FREE; CRYSTALLINE SILICON; PERFORMANCE; MOOX;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

We investigated nitrogen doped cuprous oxide (Cu2O:N) as a p-type emitter for silicon heterojunction (SHJ) solar cells. The SHJ solar cells with p-type Cu2O:N emitter were fabricated to assess the potential of p-type Cu2O:N. An opencircuit voltage of 0.568 V, a short-circuit current density of 34.1 mA/cm(2), a fill factor of 0.439, and a conversion efficiency of 8.50% were obtained from the fabricated solar cells. The poor open circuit voltage and fill factor are probably due to the interface between intrinsic amorphous silicon oxide passivation layer and the p-type Cu2O:N.

引用

页码：2145 / 2150

页数：6

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