Symmetric reflection line resonator and its quality factor modulation by a two-dimensional electron gas

被引：10

作者：

Zhang, Miao-Lei ^{[1
]}

Deng, Guang-Wei ^{[1
]}

Li, Shu-Xiao ^{[1
]}

Li, Hai-Ou ^{[1
]}

Cao, Gang ^{[1
]}

Tu, Tao ^{[1
]}

Xiao, Ming ^{[1
]}

Guo, Guang-Can ^{[1
]}

Jiang, Hong-Wen ^{[2
]}

Siddiqi, Irfan ^{[3
]}

Guo, Guo-Ping ^{[1
]}

机构：

[1] Univ Sci & Technol, Key Lab Quantum Informat, Hefei 230026, Peoples R China

[2] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

[3] Univ Calif, Dept Phys, Quantum Nanoelect Lab, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期

关键词：

QUANTUM; QUBITS;

D O I：

10.1063/1.4866336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have designed and fabricated a half-wavelength reflection line resonator that consists of a pair of coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a small square with a two-dimensional electron gas under the resonator, the quality factor was tuned over a large range from 2700 to below 600. Apart from being of fundamental interest, this gate modulation technique has the potential for use in on-chip resonator applications. (C) 2014 AIP Publishing LLC.

引用

页数：4

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