In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

被引：81
|
作者：
Pereira, J. [1 ]
Pichon, L. E. [1 ,2 ]
Dussart, R. [1 ]
Cardinaud, C. [3 ]
Duluard, C. Y. [1 ]
Oubensaid, E. H. [1 ]
Lefaucheux, P. [1 ]
Boufnichel, M. [2 ]
Ranson, P. [1 ]
机构：
[1] Univ Orleans, CNRS, GREMI, F-45067 Orleans 2, France
[2] STMicroelect, F-37071 Tours 2, France
[3] Univ Nantes, Inst Mat Jean Rouxel, CNRS, F-44322 Nantes 3, France
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 07期
关键词：
carbon; cryogenics; desorption; fluorine; oxygen; passivation; plasma materials processing; silicon compounds; sputter etching; X-ray photoelectron spectra; CRYOGENIC TEMPERATURES; SILICON; PLASMA; MECHANISMS; FLUORINE; DENSITY; SF6;
D O I：
10.1063/1.3085957
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O-2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy (XPS) device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.
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页数：3
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