Magnetotransport properties of p-type carbon-doped ZnO thin films

被引：80

作者：

Herng, T. S. ^{[1
]}

Lau, S. P. ^{[2
]}

Wang, L. ^{[3
]}

Zhao, B. C. ^{[3
]}

Yu, S. F. ^{[1
]}

Tanemura, M. ^{[4
]}

Akaike, A. ^{[4
]}

Teng, K. S. ^{[5
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[4] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

[5] Swansea Univ, Sch Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA2 8PP, W Glam, Wales

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

关键词：

ROOM-TEMPERATURE; FERROMAGNETISM;

D O I：

10.1063/1.3176434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO: C films was found to be around 1.35 mu(B) per carbon atom. The ZnO: C films showed p-type conduction with a hole concentration of similar to 5 X 10(17) cm(-3). In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO: C films. The magnetotransport properties of the ZnO: C suggested that the films possessed charge carrier spin polarization. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3176434]

引用

页数：3

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