Prediction of a large-gap quantum-spin-Hall insulator: Diamond-like GaBi bilayer

被引：11

作者：

Wang, Aizhu ^{[1
,2
,3
]}

Du, Aijun ^{[3
]}

Zhao, Mingwen ^{[1
,2
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[3] Queensland Univ Technol, Sch Chem Phys & Mech Engn, Brisbane, Qld 4001, Australia

来源：

NANO RESEARCH | 2015年 / 8卷 / 12期

基金：

澳大利亚研究理事会; 中国国家自然科学基金;

关键词：

topological insulators; first-principles calculations; two-dimensional cubic-diamond-like lattice; Rashba spin splitting; band inversion; TOPOLOGICAL INSULATORS; LATTICE;

D O I：

10.1007/s12274-015-0882-z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A quantum-spin-Hall (QSH) state was achieved experimentally, albeit at a low critical temperature because of the narrow band gap of the bulk material. Twodimensional topological insulators are critically important for realizing novel topological applications. Using density functional theory (DFT), we demonstrated that hydrogenated GaBi bilayers (HGaBi) form a stable topological insulator with a large nontrivial band gap of 0.320 eV, based on the state-of-the-art hybrid functional method, which is implementable for achieving QSH states at room temperature. The nontrivial topological property of the HGaBi lattice can also be confirmed from the appearance of gapless edge states in the nanoribbon structure. Our results provide a versatile platform for hosting nontrivial topological states usable for important nanoelectronic device applications.

引用

页码：3823 / 3829

页数：7