INGAAS-INP UNI-TRAVELING-CARRIER PHOTODIODES FOR HIGH POWER CAPABILITY

被引：0

作者：

Chtioui, Mourad ^{[1
]}

Enard, Alain ^{[1
]}

Carpentier, Daniele ^{[1
]}

Bernard, Stephan ^{[1
]}

Rousseau, Benjamin ^{[1
]}

Lelarge, Francois ^{[1
]}

Pommereau, Frederic ^{[1
]}

Achouche, Mohand ^{[1
]}

机构：

[1] Alcatel Thales III V Lab, F-91460 Marcoussis, France

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

high power photodiode; uni-traveling-carrier photodiode; thermal dissipation; series-resistance; space-charge effect; -1dB compression;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We compare two Uni-Traveling-Carrier photodiodes for high power applications. Saturation current is increased from 62mA to 90mA at 20GHz due to improved series-resistance and heat power dissipation. The associated 3-dB bandwidth is shown to increase simultaneously from 30GHz at 40mA to 32GHz at 70mA.

引用

页码：264 / 267

页数：4