Theoretical,and experimental study on junction temperature of packaged Fabry-Perot laser diode

被引：15

作者：

Han, JH ^{[1
]}

Park, SW ^{[1
]}

机构：

[1] LG Cable, Fiber Opt & Telecommun Res Lab, Anyang 431080, South Korea

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2004年 / 4卷 / 02期

关键词：

laser reliability; laser thermal factors; semiconductor device packaging; semiconductor lasers;

D O I：

10.1109/TDMR.2004.827834

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characterization of laser diode at high temperature for the issue of long-term reliability to detect and screen the initial failures originated from internal stress and optical instability is performed. Estimation of junction temperature of 1.55 mum Fabry-Perot laser diode was theoretically approached by using thermal resistance of materials regarding the heat path from analytically modeling laser diode. Under the condition of burn-in test, experiments measuring the junction temperature with current injection at controlled temperature verify the result compared to that of analysis.

引用

页码：292 / 294

页数：3

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