Interconnect thermal modeling for accurate simulation of circuit timing and reliability

被引：69
|
作者：
Chen, DQ [1 ]
Li, EH
Rosenbaum, E
Kang, SM
机构：
[1] Intel Corp, Technol CAD, Hillsboro, OR 97124 USA
[2] LSI Log Corp, Milpitas, CA 95035 USA
[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2000年 / 19卷 / 02期
关键词：
interconnect; self-heating; thermal resistance;
D O I：
10.1109/43.828548
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We apply three-dimensional finite element analysis to study the thermal coupling between nearby interconnects. We find that the temperature rise in current-carrying lines is significantly influenced by a dense array of lines in a nearby metal level. In contrast, thermal coupling between just two neighboring parallel lines is insignificant for most geometries. Design rules for average root-mean-square current density are provided for specific geometries given the requirement that the interconnect temperature be no more than 5 degrees C above the substrate temperature, Semi-empirical formulae for coupling effects are presented based on the numerical results. A procedure is proposed to implement the formulae in computer-aided design tools.
引用
收藏
页码：197 / 205
页数：9
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