A 2V 2.4GHz fully integrated cmos LNA with Q-enhancement circuit

被引：0
|
作者：
Huang, JC [1 ]
Weng, RM [1 ]
Hsia, CL [1 ]
Lin, KY [1 ]
机构：
[1] Natl Dong Hwa Univ, Dept Elect Engn, Hualien, Taiwan
来源：
APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2V 2.4GHz ISM (Industrial Scientific and Medical) frequency band LNA (Low Noise Amplifier) with negative resistance is proposed. The LNA is designed with 0.35um process. The noise figure including the resistance of inductors has been considered. An inductor is added between the MOS of cascode circuits to improve the matching and increase power gain. In addition to using negative resistance reduce an output parasitic resistance of spiral inductor. A performance of LNA with negative resistance is detailed to present in this paper.
引用
收藏
页码：1028 / 1031
页数：2
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