EXTATIC, ASML's α-tool development for EUVL

被引:23
作者
Meiling, H [1 ]
Benschop, J [1 ]
Hartman, R [1 ]
Kürz, P [1 ]
Hoghoj, P [1 ]
Geyl, R [1 ]
Harned, N [1 ]
机构
[1] Carl Zeiss, D-73446 Oberkochen, Germany
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2 | 2002年 / 4688卷
关键词
D O I
10.1117/12.472308
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Within the recently initiated EXTATIC project a complete full-field lithography exposure tool for the 50-nm technology node is being developed. The goal is to demonstrate the feasibility of extreme ultraviolet lithography (EUVL) for 50-nm imaging and to reduce technological risks in the development of EUVL production tools. We describe the EUV MEDEA(+) framework in which EXTATIC is executed, and give an update on the status of the a-tool development. A brief summary of our in-house source-collector module development is given, as well as the general vacuum architecture of the a-tool is discussed. We discuss defect-free reticle handling, and investigated the use of V-grooved brackets glued to the side of the reticle to reduce particle generation during takeovers. These takeovers do not only occur in the exposure tool, but also in multilayer deposition equipment, e-beam. pattern writers, inspection tools, etc., where similar requirements on particle contamination are present. Finally, we present an update of mirror fabrication technology and show improved mirror figuring and finishing results.
引用
收藏
页码:52 / 63
页数:4
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