Resonant tunneling diode photodetector with nonconstant responsivity

被引：6

作者：

Dong, Yu ^{[1
]}

Wang, Guanglong ^{[1
]}

Ni, Haiqiao ^{[2
]}

Chen, Jianhui ^{[1
]}

Gao, Fengqi ^{[1
]}

Li, Baochen ^{[1
]}

Pei, Kangming ^{[2
]}

Niu, Zhichuan ^{[2
]}

机构：

[1] Mech Engn Coll, Lab Nanotechnol & Microsyst, Shijiazhuang 050000, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Beijing 100084, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2015年 / 355卷

基金：

中国国家自然科学基金;

关键词：

Resonant tunneling diode; Light detection; Responsivity; SINGLE-PHOTON DETECTION; HIGH-SPEED;

D O I：

10.1016/j.optcom.2015.06.064

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Resonant tunneling diode with an In0.53Ga0.47As absorption layer is designed for light detection at 1550 nm. The responsivity of the detector is simulated by solving the Tsu-Esaki equation. The simulation results show that the responsivity of the detector is nonconstant. It decreases with the increment of the power density of the incident light. Samples of the detector are fabricated by molecular beam epitaxy. The experimental results show that the responsivity increases while the power density of the incident light decreases which agree with the simulation results. The responsivity reaches 4.8 x 10(8) A/(W/mu m(2)) at room temperature and 5.0 x 10(9) A/(W/mu m(2)) at 77 K when the power density of the incident light is lx 10(-13) W/mu m(2). 2015 Elsevier B.V. All rights reserved.

引用

页码：274 / 278

页数：5

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