Optoelectronic Properties in the Terahertz of Femtosecond-laser-ablated GaAs

被引：0

作者：

Madeo, J. ^{[1
]}

Margiolakis, A. ^{[1
,2
]}

Zhao, Z. -Y. ^{[3
]}

Hale, P. J. ^{[1
]}

Man, M. K. L. ^{[1
]}

Zhao, Q. -Z. ^{[4
]}

Peng, W. ^{[5
]}

Shi, W. -Z. ^{[3
]}

Dani, K. M. ^{[1
]}

Mariserla, Bala Murali Krishna ^{[1
]}

机构：

[1] Okinawa Inst Sci & Technol Grad Univ, Femtosecond Spect Unit, Onna, Okinawa, Japan

[2] Univ Crete, Dept Phys, Iraklion, Greece

[3] Shanghai Normal Univ, Dept Phys, Shanghai, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai, Peoples R China

[5] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China

来源：

2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices.

引用

页码：2390 / 2390

页数：1

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