Effect of (3-Glycidyloxypropyl)Trimethoxysilane (GOPS) on the Electrical Properties of PEDOT:PSS Films

被引:213
|
作者
Hakansson, Anna [1 ]
Han, Shaobo [1 ]
Wang, Suhao [1 ]
Lu, Jun [2 ]
Braun, Slawomir [2 ]
Fahlman, Mats [2 ]
Berggren, Magnus [1 ]
Crispin, Xavier [1 ]
Fabiano, Simone [1 ]
机构
[1] Linkoping Univ, Dept Sci & Technol, Lab Organ Elect, SE-60174 Linkoping, Sweden
[2] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
关键词
crosslinking; film morphology; GOPS; oxidation level; PEDOT:PSS; ORGANIC ELECTROCHEMICAL TRANSISTORS; CONDUCTING POLYMER; PHOTOELECTRON-SPECTROSCOPY; BIOELECTRONICS; MORPHOLOGY; STABILITY; CELLS;
D O I
10.1002/polb.24331
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS) has been reported as a successful functional material in a broad variety of applications. One of the most important advantages of PEDOT:PSS is its water-solubility, which enables simple and environmental friendly manufacturing processes. Unfortunately, this also implies that pristine PEDOT:PSS films are unsuitable for applications in aqueous environments. To reach stability in polar solvents, (3-glycidyloxypropyl)trimethoxysilane (GOPS) is typically used to cross-link PEDOT:PSS. Although this strategy is widely used, its mechanism and effect on PEDOT:PSS performance have not been articulated yet. Here, we present a broad study that provides a better understanding of the effect of GOPS on the electrical and electronic properties of PEDOT:PSS. We show that the GOPS reacts with the sulfonic acid group of the excess PSS, causing a change in the PEDOT:PSS film morphology, while the oxidation level of PEDOT remains unaffected. This is at the origin of the observed conductivity changes. (c) 2017 Wiley Periodicals, Inc.
引用
收藏
页码:814 / 820
页数:7
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