Pixel Circuit With Parallel Driving Scheme for Compensating Luminance Variation Based on a-IGZO TFT for AMOLED Displays

被引:26
作者
Lin, Chih-Lung [1 ]
Lai, Po-Chun [1 ]
Lai, Po-Cheng [1 ]
Chen, Po-Syun [1 ]
Wu, Wan-Lin [1 ]
机构
[1] Natl Cheng Kung Univ, Elect Engn, Tainan 701, Taiwan
来源
JOURNAL OF DISPLAY TECHNOLOGY | 2016年 / 12卷 / 12期
关键词
Active-matrix organic light-emitting diode (AMOLED); amorphous indium-gallium-zinc-oxide (a-IGZO); thin-film transistor (TFT); THRESHOLD-VOLTAGE; SI TFTS; DEGRADATION;
D O I
10.1109/JDT.2016.2616507
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work proposes a new pixel structure based on amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) and a parallel addressing scheme for high-resolution active-matrix organic light-emitting diode (AMOLED) displays. The proposed circuit compensates for the nonuniformity of luminance that is caused by shifts in the threshold voltage (V-TH) and mobility of driving TFTs. Measurement results verify that the parallel addressing scheme successfully extends the compensation time and accurately detects the V-TH of the driving TFT. Moreover, the proposed circuit reduces the variations of OLED luminance from more than 83% to less than 13% when the V-TH and mobility of driving TFT shifts by 1 V and 30%, respectively, and the V-TH of OLED varies from 0 to 0.9 V.
引用
收藏
页码:1681 / 1687
页数:7
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