Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature

被引：15
|
作者：
Kamerbeek, A. M. [1 ]
de Vries, E. K. [1 ]
Dankert, A. [2 ]
Dash, S. P. [2 ]
van Wees, B. J. [1 ]
Banerjee, T. [1 ]
机构：
[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[2] Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 21期
关键词：
STRONTIUM-TITANATE; INTERFACE; SILICON; OXIDES;
D O I：
10.1063/1.4880895
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO3. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO3 which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics. (C) 2014 AIP Publishing LLC.
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页数：4
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