Growth and characterization of epitaxial Fe0.8Ga0.2/0.69PMN-0.31PT heterostructures

被引：16

作者：

Seguin, Dan ^{[1
]}

Sunder, Madhana ^{[1
]}

Krishna, Lakshmi ^{[1
]}

Tatarenko, Alexander ^{[2
]}

Moran, P. D. ^{[1
]}

机构：

[1] Michigan Technol Univ, Dept Mat Sci & Engn, Houghton, MI 49931 USA

[2] Oakland Univ, Dept Phys, Rochester, MI 48309 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 12期

关键词：

High-resolution X-ray diffraction; X-ray diffraction; Physical vapor deposition processes; Ferroelectric materials; Magnetic materials; GA;

D O I：

10.1016/j.jcrysgro.2009.03.020

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Fe0.8Ga0.2 films were deposited on bulk single-crystal (0 0 1) 0.69PMN-0.31 PT substrates by DC magnetron sputtering to make magnetoelectric bilayer composites. Films deposited at temperatures below 600 degrees C were X-ray amorphous. Films deposited at temperatures of 600 degrees C and higher exhibited a single-crystal (0 0 1) disordered BCC structure. The crystalline FeGa films demonstrate a 45 degrees twisted cube-on-cube epitaxial relationship with the PMN-PT substrates. Heterostructures with an X-ray amorphous FeGa film exhibited zero magnetcrelectric response. Heterostructures with a 990 nm epitaxial FeGa film exhibited a large inverse magnetcrelectric voltage coefficient of 13.4 (G cm)/V. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3235 / 3238

页数：4

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