The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

被引：6

作者：

Tong, Xiaodong ^{[1
]}

Li, Qian ^{[1
]}

An, Ning ^{[1
]}

Wang, Wenjie ^{[1
]}

Deng, Xiaodong ^{[1
]}

Zhang, Liang ^{[1
]}

Liu, Haitao ^{[1
]}

Zeng, Jianping ^{[1
]}

Li, Zhiqiang ^{[1
]}

Tang, Hailing ^{[1
]}

Xiong, Yong-Zhong ^{[1
]}

机构：

[1] China Acad Engn Phys, Terahertz Semicond Device Lab, Chengdu, Peoples R China

来源：

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2015年 / 36卷 / 11期

关键词：

THz technology; GaAs planar Schottky barrier diode; Fourth subharmonic mixer; Conversion loss;

D O I：

10.1007/s10762-015-0208-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A planar Schottky barrier diode with the designed Schottky contact area of approximately 3 mu m(2) is developed on gallium arsenide (GaAs) material. The measurements of the developed planar Schottky barrier diode indicate that the zero-biased junction capacitance C-j0 is 11.0 fF, the parasitic series resistance R-S is 3.0 Omega, and the cut off frequency f(T) is 4.8 THz. A monolithically integrated fourth subharmonic mixer with this diode operating at the radio frequency (RF) signal frequency of 0.34 THz with the chip area of 0.6 mm(2) is implemented. The intermediate frequency (IF) bandwidth is from DC to 40 GHz. The local oscillator (LO) bandwidth is 37 GHz from 60 to 97 GHz. The RF bandwidth is determined by the bandwidth of the on chip antenna, which is 28 GHz from 322 to 350 GHz. The measurements of the mixer demonstrated a conversion loss of approximately 51 dB.

引用

页码：1112 / 1122

页数：11

共 41 条

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