Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs

被引：28

作者：

Campbell, J. P. ^{[1
]}

Yu, L. C. ^{[1
,2
]}

Cheung, K. P. ^{[1
]}

Qin, J. ^{[1
,3
]}

Suehle, J. S. ^{[1
]}

Oates, A. ^{[4
]}

Sheng, K. ^{[2
]}

机构：

[1] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA

[2] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08855 USA

[3] Univ Maryland, Dept Engn Mech, College Pk, MD 20740 USA

[4] TSMC Ltd, Hsinchu 30077, Taiwan

来源：

2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2009年

关键词：

RTN; Sub-V-TH operation; SRAM; INTERFACE; MOSFETS; IMPACT; CMOS; AMPLITUDES; DEFECTS; SIGNALS; VOLTAGE;

D O I：

10.1109/ICICDT.2009.5166255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-V-TH) operation of highly scaled devices. We rind that the sub-V-TH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel dimension scaling and reducing the gate overdrive into the sub-V-TH regime. These large RTN fluctuations greatly impact circuit variability and represent a troubling obstacle that must be solved if sub-V-TH operation is to become a viable solution for low-power applications.

引用

页码：17 / +

页数：2

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