Controlled Growth of Supported ZnO Inverted Nanopyramids with Downward Pointing Tips

被引:10
作者
Barreca, Davide [1 ,2 ]
Carraro, Giorgio [3 ,4 ]
Maccato, Chiara [3 ,4 ]
Altantzis, Thomas [5 ]
Kaunisto, Kimmo [6 ,7 ]
Gasparotto, Alberto [3 ,4 ]
机构
[1] Padova Univ, CNR, ICMATE, Dept Chem Sci, I-35131 Padua, Italy
[2] Padova Univ, INSTM, Dept Chem Sci, I-35131 Padua, Italy
[3] Padova Univ, Dept Chem Sci, I-35131 Padua, Italy
[4] INSTM, I-35131 Padua, Italy
[5] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium
[6] Tampere Univ Technol, Dept Chem & Bioengn, FIN-33101 Tampere, Finland
[7] VTT Tech Res Ctr Finland Ltd, Tampere 33101, Finland
关键词
CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; ZINC-OXIDE; PHOTOCATALYTIC PROPERTIES; PHOTOLUMINESCENCE PROPERTIES; HYDROTHERMAL GROWTH; EPITAXIAL-GROWTH; FACILE SYNTHESIS; NANOROD ARRAYS; NANOSTRUCTURES;
D O I
10.1021/acs.cgd.8b00198
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
High purity porous ZnO nanopyramids with controllable properties are grown on their tips on Si(100) substrates by means of a catalyst-free vapor phase deposition route in a wet oxygen reaction environment. The system degree of preferential [001] orientation, as well as nanopyramid size, geometrical shape, and density distribution, can be finely tuned by varying the growth temperature between 300 and 400 degrees C, whereas higher temperatures lead to more compact systems with a three-dimensional (3D) morphology. A growth mechanism of the obtained ZnO nanostructures based on a self-catalytic vapor-solid (VS) mode is proposed, in order to explain the evolution of nanostructure morphologies as a function of the adopted process conditions. The results obtained by a thorough chemico-physical characterization enable us to get an improved control over the properties of ZnO nanopyramids grown by this technique. Taken together, they are of noticeable importance not only for fundamental research on ZnO nanomaterials with controlled nano-organization but also to tailor ZnO functionalities in view of various potential applications.
引用
收藏
页码:2579 / 2587
页数:9
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