Formation and propagation of p-n junction in p-(HgCd)Te caused by dry etching

被引：11

作者：

Belas, E ^{[1
]}

Grill, R

Franc, J

Sitter, H

Moravec, P

Höschl, P

Toth, AL

机构：

[1] Charles Univ, Inst Phys, CZ-12116 Prague 2, Czech Republic

[2] Johannes Kepler Univ, Inst Expt Phys, A-4040 Linz, Austria

[3] Hungarian Acad Sci, Tech Phys Res Inst, Budapest, Hungary

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 07期

关键词：

type conversion; (HgCd)Te; dry etching; chemical diffusion;

D O I：

10.1007/s11664-002-0229-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The extended model describing the formation and propagation of a converted n-type layer in p-(HgCd)Te during dry etching (DE) based on the ultrafast diffusion of Hg interstitials and their recombination with Hg vacancies is presented. A couple of one- and two-dimensional equations are solved numerically to characterize the kinetics of the p-n junction. The time dependence of the p-n junction depth and ratio of lateral extension under the shielding mask to the depth of the p-n junction are calculated considering a detailed initial condition of the Hg-interstitial surface source.

引用

页码：738 / 742

页数：5

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