Structural characterization of porous low-k SiOC thin films using x-ray porosimetry

被引：5

作者：

Lee, HJ ^{[1
]}

Kim, YH ^{[1
]}

Kim, JY ^{[1
]}

Lin, EK ^{[1
]}

Bauer, BJ ^{[1
]}

Wu, W ^{[1
]}

Kim, HJ ^{[1
]}

机构：

[1] NIST, Div Polymers, Gaithersburg, MD 20899 USA

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel x-ray porosimetry measurement is used to characterize the structure and properties of porous low-k dielectric films after varying process conditions. We determine the film thickness, density depth profile, average density, wall density, and porosity. When the deposition temperature increases, the porosity and wall density increase. The low porosity of films deposited at 200 degreesC results in good mechanical properties with a dielectric constant as low as 2.5.

引用

页码：54 / 56

页数：3

共 7 条

[1] Nondestructive determination of pore size distribution in thin films deposited on solid substrates [J].