Evaluating Different Implementations of Online Junction Temperature Sensing for Switching Power Semiconductors

被引:52
作者
Niu, He [1 ]
Lorenz, Robert D. [2 ]
机构
[1] Gen Motors, Global Prop Syst, Pontiac, MI 48340 USA
[2] Univ Wisconsin, Wisconsin Elect Machines & Power Elect Consortium, Madison, WI 53706 USA
关键词
Junction temperature; online sensing; switching power semiconductor; VOLTAGE-SOURCE; DEGRADATION; MOSFET; MODEL; LOSSES; DEVICE;
D O I
10.1109/TIA.2016.2614773
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Switching power semiconductor online junction temperature T-j sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of the implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online T-j sensing methods. This paper includes T-j sensing methods based on device power dissipation, T-j sensing methods based on the "sensor-on-die technology," T-j sensing methods based on device on-state analysis, and T-j sensing methods based on device switching transients. Advantages and limits of these methods are also provided.
引用
收藏
页码:391 / 401
页数:11
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