Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

被引:163
作者
Huang, Zongyu [1 ,2 ]
Han, Weijia [1 ,2 ]
Tang, Hongli [2 ]
Ren, Long [2 ]
Chander, D. Sathish [1 ]
Qi, Xiang [1 ,2 ]
Zhang, Han [1 ]
机构
[1] Shenzhen Univ, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China
[2] Xiangtan Univ, Hunan Prov Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
来源
2D MATERIALS | 2015年 / 2卷 / 03期
基金
中国国家自然科学基金;
关键词
graphene; molybdenum disulfide; photoresponse; FEW-LAYER MOS2; MOLYBDENUM-DISULFIDE MOS2; DOPED FIBER LASER; HIGH-DETECTIVITY; 2-DIMENSIONAL MATERIALS; SATURABLE ABSORBER; GRAPHENE PHOTONICS; SPECTRAL RESPONSE; PHOTOTRANSISTORS; HETEROJUNCTION;
D O I
10.1088/2053-1583/2/3/035011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have fabricated a novel sunlight photo-detector based on a MoS2/graphene heterostructure. The MoS2/graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS2/graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and aUV-vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS2/graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light-matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS2/graphene heterostructure suggest promising applications in the field of photonics and optoelectronics.
引用
收藏
页数:6
相关论文
共 50 条
[21]   Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition [J].
Xiao, Yifan ;
Min, Long ;
Liu, Xinke ;
Liu, Wenjun ;
Younis, Usman ;
Peng, Tonghua ;
Kang, Xuanwu ;
Wu, Xiaohan ;
Ding, Shijin ;
Zhang, David Wei .
NANOPHOTONICS, 2020, 9 (09) :3035-3044
[22]   Ultrafast photoinduced carrier transfer dynamics in monolayer MoS2/graphene heterostructure [J].
Liu, Ben ;
Yan, Lihe ;
Si, Jinhai ;
Shen, Yanan ;
Hou, Xun .
JOURNAL OF APPLIED PHYSICS, 2023, 134 (21)
[23]   Enhanced Performance of a CVD MoS2 Photodetector by Chemical in Situ n-Type Doping [J].
Li, Songyu ;
Chen, Xiaoqing ;
Liu, Famin ;
Chen, Yongfeng ;
Liu, Beiyun ;
Deng, Wenjie ;
An, Boxing ;
Chu, Feihong ;
Zhang, Guoqing ;
Li, Shanlin ;
Li, Xuhong ;
Zhang, Yongzhe .
ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (12) :11636-11644
[24]   Band Alignment of Graphene/MoS2/Fluorine Tin Oxide Heterojunction for Photodetector Application [J].
Romanov, Roman I. ;
Kozodaev, Maxim G. ;
Lebedinskii, Yury Yu. ;
Zabrosaev, Ivan V. ;
Guberna, Evgenii A. ;
Markeev, Andrey M. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (06)
[25]   Amorphous MoS2 Photodetector with Ultra-Broadband Response [J].
Huang, Zhongzheng ;
Zhang, Tianfu ;
Liu, Junku ;
Zhang, Lihui ;
Jin, Yuanhao ;
Wang, Jiaping ;
Jiang, Kaili ;
Fan, Shoushan ;
Li, Qunqing .
ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (07) :1314-1321
[26]   All-Inorganic Perovskite Quantum Dot-Monolayer MoS2 Mixed-Dimensional van der Waals Heterostructure for Ultrasensitive Photodetector [J].
Wu, Hualin ;
Si, Haonan ;
Zhang, Zihan ;
Kang, Zhuo ;
Wu, Pingwei ;
Zhou, Lixin ;
Zhang, Suicai ;
Zhang, Zheng ;
Liao, Qingliang ;
Zhang, Yue .
ADVANCED SCIENCE, 2018, 5 (12)
[27]   Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts [J].
Kwak, Joon Young ;
Hwang, Jeonghyun ;
Calderon, Brian ;
Alsalman, Hussain ;
Munoz, Nini ;
Schutter, Brian ;
Spencer, Michael G. .
NANO LETTERS, 2014, 14 (08) :4511-4516
[28]   Photogating induced high sensitivity and speed from heterostructure of few-layer MoS2 and reduced graphene oxide-based photodetector [J].
Das, Chayan ;
Kumar, Ashok ;
Kumar, Suresh ;
Dambhare, Neha V. ;
Kumar, Mahesh ;
Rath, Arup K. ;
Sahu, Satyajit .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (44) :30419-30427
[29]   Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction [J].
Vabbina, PhaniKiran ;
Choudhary, Nitin ;
Chowdhury, Al-Amin. ;
Sinha, Raju ;
Karabiyik, Mustafa ;
Das, Santanu ;
Choi, Wonbong ;
Pala, Nezih .
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (28) :15206-15213
[30]   UV-Vis-NIR photodetector based on monolayer MoS2 [J].
Zhou, Yong Heng ;
An, He Nan ;
Gao, Cheng ;
Zheng, Zhao Qiang ;
Wang, Bing .
MATERIALS LETTERS, 2019, 237 :298-302