Thermoelectric Properties of Two-Dimensional Gallium Telluride

被引：28

作者：

Shangguan, Hejing ^{[1
]}

Han, Lihong ^{[1
]}

Zhang, Tao ^{[3
]}

Quhe, Ruge ^{[1
,2
]}

Wang, Qian ^{[1
]}

Li, Shanjun ^{[3
]}

Lu, Pengfei ^{[1
,3
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China

[3] Sichuan Univ, Coll Elect Engn & Informat Technol, Chengdu 610065, Sichuan, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 09期

基金：

中国国家自然科学基金;

关键词：

First-principles; two-dimensional GaTe; hexagonal structure; monoclinic structure; thermoelectric transport properties; figure of merit (ZT); GRAPHENE; GAS; ANISOTROPY; TRANSPORT; GROWTH; PLANE;

D O I：

10.1007/s11664-019-07323-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phonon, electronic and thermoelectric transport properties of two-dimensional (2D) GaTe with hexagonal structure and monoclinic structure are investigated by using first-principles calculations. Stability of these structures are confirmed by phonon dispersion calculations. The hexagonal structure shows better thermoelectric properties because of its lower thermal conductivity, higher electrical conductivities and Seebeck coefficients. The maximum value of the figure of merit (ZT) for GaTe reaches 0.85 for hexagonal structure when T=1100K. This indicates that 2D GaTe will be useful in the field of thermoelectric applications.

引用

页码：5988 / 5994

页数：7

共 57 条

[1] Hybrid functional calculations of electronic and thermoelectric properties of GaS, GaSe, and GaTe monolayers [J].