Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

被引：11

作者：

Pakarinen, J. ^{[1
]}

Polojarvi, V. ^{[1
]}

Aho, A. ^{[1
]}

Laukkanen, P. ^{[2
]}

Peng, C. S. ^{[1
]}

Schramm, A. ^{[1
]}

Tukiainen, A. ^{[1
]}

Pessa, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[2] Univ Turku, Dept Phys & Astron, FIN-20014 Turku, Finland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 07期

基金：

芬兰科学院;

关键词：

annealing; beryllium; chemical interdiffusion; doping profiles; gallium arsenide; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; self-assembly; semiconductor doping; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; spectral line shift; GAAS;

D O I：

10.1063/1.3086298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of postgrowth thermal annealing on optical properties of beryllium-doped InAs quantum dot (QD) heterostructures grown by molecular beam epitaxy. Thermal annealing induced a blueshift of up to 200 meV in light emission from an undoped sample, while a sample having GaAs layer heavily doped with beryllium on top of the QD region exhibited a much smaller blueshift. This phenomenon is interpreted as due to suppression of annealing-induced In/Ga interdiffusion.

引用

页数：3

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