Film properties of ZnO:Al films deposited by co-sputtering of ZnO:Al and contaminated Zn targets with Co, Mn and Cr

被引：24

作者：

Tominaga, K

Takao, T

Fukushima, A

Moriga, T

Nakabayashi, I

机构：

[1] Univ Tokushima, Fac Engn, Dept Elect & Elect Engn, Tokushima 7708506, Japan

[2] Univ Tokushima, Tokushima 7708506, Japan

来源：

VACUUM | 2002年 / 66卷 / 3-4期

关键词：

conductive transparent film; ZnO : Al; impurity contamination; annealing;

D O I：

10.1016/S0042-207X(02)00124-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Influence of Co, Mn and Cr contaminants were investigated in transparent conductive ZnO:Al films in the co-sputtering of ZnO:Al and Zn targets. The addition of extra Zn in this process was effective in decreasing film resistivity. However, the resistivity of as-grown ZnO film showed a rapid increase at 100degreesC annealing in air. This was attributed to the incorporation of oxygen at boundaries of columnar micro crystals of ZnO:Al. The inclusion of contaminants such as Co, Mn and Cr was observed to cancel the Zn-doping effect for as-grown ZnO:Al films, but stabilized the resistivity change under oxygen exposure. The film with Cr doping was stable below 400degreesC, and showed nearly a constant of about 7 x 10(-4) Omega cm. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：511 / 515

页数：5

共 5 条

[1] SUBSTRATE-TEMPERATURE DEPENDENCE OF ELECTRICAL-PROPERTIES OF ZNO-AL EPITAXIAL-FILMS ON SAPPHIRE (12BAR10) [J].