Impact of Mechanical Stress on 3-D NAND Flash Current Conduction

被引：6

作者：

Kruv, Anastasiia ^{[1
,2
]}

Arreghini, Antonio ^{[2
]}

Verreck, Devin ^{[2
]}

Gonzalez, Mario ^{[2
]}

Van den Bosch, Geert ^{[2
]}

De Wolf, Ingrid ^{[1
,2
]}

Rosmeulen, Maarten ^{[2
]}

机构：

[1] Katholieke Univ Leuven, Dept Mat Engn, B-3000 Leuven, Belgium

[2] IMEC, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 11期

关键词：

3-D NAND; current conduction; finite elementmodeling (FEM); flash; mechanical stress; memory; nanoindentation;

D O I：

10.1109/TED.2020.3024450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work experimentally investigates current conduction in 3-D NAND under up to 7 GPa of externally applied compressive mechanical stress. The impact of channel crystallinity and geometry is studied by comparing four types of Si channels: polycrystalline full channel, single-crystal full channel, polycrystalline macaroni channel, and single-crystal macaroni channel. In the studied channel types, the mechanical stress was found to cause reversible degradation of I-ON (up to one order ofmagnitude) and I-OFF (up to seven orders of magnitude). Using TCAD simulations, I-ON and I-OFF deterioration are attributed to carrier mobility and Si bandgap decreases under mechanical stress, respectively. The simulations also suggest that both effects depend on the channelmorphology, which results in a different extent of stress impact on the four studied types of Si channels.

引用

页码：4891 / 4896

页数：6

共 17 条

[11] Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory [J].

Namkoong, Yeon ;

Yang, Hyung Jun ;

Song, Yun Heub .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (07) :5055-5060

[12] Extraction of elastic modulus of porous ultra-thin low-k films by two-dimensional finite-element simulations of nanoindentation [J].

Okudur, O. O. ;

Vanstreels, K. ;

De Wolf, I. ;

Hangen, U. .

JOURNAL OF APPLIED PHYSICS, 2016, 119 (02)

[13] Exploring the limits of stress-enhanced hole mobility [J].

Smith, L ;

Moroz, V ;

Eneman, G ;

Verheyen, P ;

Nouri, F ;

Washington, L ;

Jurczak, M ;

Penzin, O ;

Pramanik, D ;

De Meyer, K .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) :652-654

[14] Variability Effects in Nanowire and Macaroni MOSFETs-Part I: Random Dopant Fluctuations [J].

Spinelli, Alessandro S. ;

Compagnoni, Christian Monzio ;

Lacaita, Andrea L. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (04) :1485-1491

[15] Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors [J].

Sun, Y. ;

Thompson, S. E. ;

Nishida, T. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)

[16] Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D NAND Flash Memory [J].

Van den Bosch, G. ;

Kar, G. S. ;

Blomme, P. ;

Arreghini, A. ;

Cacciato, A. ;

Breuil, L. ;

De Keersgieter, A. ;

Paraschiv, V. ;

Vrancken, C. ;

Douhard, B. ;

Richard, O. ;

Van Aerde, S. ;

Debusschere, I. ;

Van Houdt, J. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) :1501-1503

[17]

Verreck D., 2019, INT CONF SIM SEMI PR, P1, DOI [10.1109/SISPAD.2019.8870494., DOI 10.1109/sispad.2019.8870494]

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