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Study of Electronic transport properties of doped 8AGNR
被引:1
|作者:
Sharma, Uma Shankar
[1
]
Srivastava, Anurag
[2
,3
]
Verma, U. P.
机构:
[1] BSF Acad Tekanpur, Rustamji Inst Technol, Gwalior 475005, India
[2] ABV Indian Inst Informat Technol Management, Adv Mat Res Grp, Computat Nanoscience Technol Lab, Gwalior 474015, India
[3] Jiwaji Univ, Sch Studies Phys, Gwalior 474011, India
来源:
SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B
|
2014年
/
1591卷
关键词:
GNR;
Transport properties;
DFT;
GRAPHENE;
D O I:
10.1063/1.4872968
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The electronic and transport properties of 8-armchair graphene nanoribbon (8AGNR) with defect at different sites are investigated by performing first-principles calculations based on density functional theory (DFT). The calculated results show that the 8AGNR are semiconductor. The introduction of 3d transition metals, creates the non-degenerate states in the conduction band, makes 8AGNR metallic. The computed transmission spectrum confirms that AGNR are semiconducting in nature and their band gap remain unchanged and localized states appear when there is vacancy in their structures, and the conductance decreases due to defects compared with the pristine nanoribbon.
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页码:1386 / 1388
页数:3
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