Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors

被引：10

作者：

Gu Wen-Ping ^{[1
]}

Zhang Jin-Cheng ^{[1
]}

Wang Chong ^{[1
]}

Feng Qian ^{[1
]}

Ma Xiao-Hua ^{[1
]}

Hao Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 02期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN HEMTs; Co-60 gamma-rays irradiation; surface state; PERFORMANCE; HEMTS; DC;

D O I：

10.7498/aps.58.1161

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AlGaN/GaN high electron mobility transistors ( HEMT) unpassivated with different gate lengths are irradiated with Co-60 gamma-rays to doses up to 1 Mrad ( SO. The bigger the doses are and the smaller the gate lengthis, the greater the changes in drain current and transconductanceare. While the gate leakage current is significantly increased after irradiation, the threshold voltage is relatively unaffected. By analysing the series resistance of channel and the threshold voltage, we find that irradiation induced electronegative surface state charges is one of the important reasons of radiation damage.

引用

页码：1161 / 1165

页数：5

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