Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes

被引：5
作者：
Akimoto, R. [1 ]
Kuroda, R. [1 ,2 ]
Teramoto, A. [2 ,3 ]
Mawaki, T. [1 ]
Ichino, S. [1 ]
Suwa, T. [2 ]
Sugawa, S. [1 ,2 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, 6-6-11 Aza Aoba, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Aoba Ku, 6-6-11 Aza Aoba, Sendai, Miyagi 9808579, Japan
[3] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, 1-4-2 Kagamiyama, Higashihiroshima 7398527, Japan
来源：
2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年
关键词：
Array Test Circuit; Drain-to-Source Voltage; Random Telegraph Noise (RTN); Trapezoidal Gate Transistor;
D O I：
10.1109/irps45951.2020.9128341
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shaped gates, and characteristics of random telegraph noise (RTN), such as amplitude and time constants under various drain-to-source voltage (V-DS) conditions were extracted and analyzed. It was found that RTN is dominated by traps at the minimum gate width in the channel formed under each of the operating bias conditions, and traps at the source side are most influential under a large V-DS. The trap location along the source-drain direction is estimated by the V-DS dependencies of RTN characteristics.
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页数：6
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