Adhesion enhancement of diamond coating on minor Al-modified copper substrate

被引：19

作者：

Li, X. J. ^{[1
]}

Li, Y. S. ^{[2
]}

Pan, T. J. ^{[3
]}

Yang, L. Z. ^{[2
]}

He, L. L. ^{[1
]}

Yang, Q. ^{[2
]}

Hirose, A. ^{[4
]}

机构：

[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

[2] Univ Saskatchewan, Dept Mech Engn, Saskatoon, SK S7N 5A9, Canada

[3] Changzhou Univ, Dept Mat Sci & Engn, Changzhou 213164, Peoples R China

[4] Univ Saskatchewan, Plasma Phys Lab, Saskatoon, SK S7N 5E2, Canada

来源：

基金：

加拿大自然科学与工程研究理事会;

关键词：

Diamond; Copper; CVD; Adhesion; Alloying modification; CVD DIAMOND; FILMS; GROWTH; GRAPHENE; ALLOYS; CU;

D O I：

10.1016/j.diamond.2014.03.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the enhanced interfacial adhesion of diamond coating on copper substrate modified by a small fraction of Al. For pure copper substrate, the diamond coating formed tends to crack and delaminate, primarily caused by a slight accumulation of detrimental graphite intermediate layer and thermal stress induced by mismatch of the coefficients of thermal expansion. Additions of 1 and 3 at.% Al to the copper substrate gradually decrease the intermediate graphitic phase. At the higher Al concentration, an aluminium oxide forms at the coating-substrate interface, and graphitic/amorphous carbon is completely inhibited, leading to significantly enhanced interfacial adhesion of diamond coating. The electron structure of copper is not observed to significantly alter on this Cu-Al dilute alloy. The alumina barrier layer preferentially formed on copper surface is believed to play a key role in preventing graphitization and adhesion enhancement. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1 / 6

页数：6

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