Design of CMOS Temperature Sensors Based on Ring Oscillators in 180-nm and 110-nm technology

被引：0

作者：

Tolic, Ivan Porin ^{[1
]}

Mikulic, Josip ^{[1
]}

Schatzberger, Gregor ^{[1
]}

Baric, Adrijan ^{[2
]}

机构：

[1] Ams AG, Tobelbader Str 39, A-8141 Premstatten, Austria

[2] Univ Zagreb, Fac Elect Engn & Comp, Unska 3, Zagreb, Croatia

来源：

2020 43RD INTERNATIONAL CONVENTION ON INFORMATION, COMMUNICATION AND ELECTRONIC TECHNOLOGY (MIPRO 2020) | 2020年

关键词：

CMOS integrated circuit; smart temperature sensor; ring oscillator; time-to-digital converter; digital counter; mixed-signal design; 3-SIGMA INACCURACY; -55-DEGREES-C;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work two on-chip smart temperature sensors are presented. Both designs are based on two ring oscillators operating complementary. The readout circuit is achieved using time-to-digital converter and digital counter. The first sensor is designed in 180-nm technology, and the other is designed in 110-nm. The simulation results from both sensors are presented in the temperature range from -40 to 125 degrees C. The first design achieves an accuracy of +4.9/-0.2 degrees C, while the other achieves an accuracy of +/- 3.8 degrees C.

引用

页码：104 / 108

页数：5

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