Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques

被引:3
作者
Berthold, Tobias [1 ]
Benstetter, Guenther [1 ]
Frammelsberger, Werner [1 ]
Rodriguez, Rosana [2 ]
Nafria, Montserrat [2 ]
机构
[1] Deggendorf Inst Technol, D-94469 Deggendorf, Germany
[2] Univ Autonoma Barcelona, Bellaterra 08193, Barcelona, Spain
关键词
Chemical Force Microscopy; Conductive Atomic Force Microscopy; Torsional resonance mode; Self-Assembled Mono layer; Copper; ELECTRICAL-PROPERTIES; CORROSION PROTECTION; FORCE MICROSCOPY; OXIDATION; SURFACES; FILMS; OXIDE; AIR;
D O I
10.1016/j.apsusc.2015.08.182
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, we used Self-Assembled Monolayer (SAM) with CH3 end-group molecules to protect copper surfaces from oxidation and investigated at nanometer scale the integrity and temperature stability of the protective film. The films were characterized by dynamic Chemical Force Microscopy (dCFM), Torsional Resonance Tunneling Atomic Force Microscopy (TR-TUNA) and Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR). We observed that temperature stress degraded local properties of our SAM films significantly, when compared to unstressed films. After temperature stress at 100 degrees C, tunneling current increased and hydrophobicity decreased substantially. In combination with the ATR-FTIR results we assigned local high current spots and local hydrophobic variations to cuprous oxide (Cu2O). After temperature stress at 150 degrees C, the measurements indicate a decomposition of the SAM film and a further oxidation of the copper surface. In addition, the results show that dynamic dCFM and TR-TUNA are appropriate tools to characterize SAM films structurally, chemically and electrically. Most important, in contrast to conventional contact mode Atomic Force Microscopy techniques, we did not observe any damage to the SAM film by dCFM and TR-TUNA measurements. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:921 / 926
页数:6
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