Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au-Cu phthalocyanine interlayer

The Al/n-type Si Schottky barrier diodes (SBDs) were prepared with Au-Cu phthalocyanine (Au-CuPc) interlayers with different Au and CuPc compositional ratios, probed their temperature dependent current-voltage (I-V) and low frequency noise properties. The Schottky barrier properties like barrier height and the ideality factor are strongly temperature dependent, implying the existence of Schottky barrier inhomogeneities. The barrier inhomogeneities was elucidated using thermionic emission theory based on the assumption of Gaussian distribution of the barrier heights. Further, a divergence in the barrier heights evaluated from the I-V characteristics and Norde's method indicates a deviation of the Al/Au-CuPc/n-type Si SBDs behavior from thermionic emission. The Richardson plot evaluated with the Gaussian distribution of barrier heights method yielded Richardson constant values close to theoretical Richardson constant of n-type Si. The room temperature current noise power spectral density (S-I) of the Al/Au-CuPc/n-type Si SBDs having various Au and CuPc concentrations showed a reciprocal of frequency (1/f)(gamma) behavior having gamma values near to unity. The decrease in S-I and gamma with increasing Au concentration in Au-CuPc interlayers was indicative of lessening barrier inhomogeneity. This was also correlated with the decrease in the value of standard deviation derived using temperature dependent I-V characteristics. Further investigations revealed that origins of 1/f noise could be associated with the fluctuations of barrier height and carrier mobility for Al/Au-CuPc/n-type Si SBDs with lower and higher Au compositions in Au-CuPc interlayers, respectively.