Evolution of Luminescence from Doped Gallium Phosphide over 40 Years

被引:13
作者
Pyshkin, Sergei [1 ,2 ]
Ballato, John [2 ]
Bass, Michael [3 ]
Turri, Giorgio [3 ]
机构
[1] Moldavian Acad Sci, Inst Appl Phys, Kishinev 277028, Moldova
[2] Clemson Univ, Ctr Opt Mat Sci & Engn Technol, Clemson, SC USA
[3] Univ Cent Florida, Coll Opt & Photon, CREOL, Orlando, FL 32816 USA
关键词
Luminescence; GaP; spectroscopy; ordering; excitons; optoelectronics;
D O I
10.1007/s11664-009-0678-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The results of luminescence studies conducted on the same samples of GaP over a 40-year period are discussed. The results strongly imply that periodic ordering of impurities improved the overall optical and mechanical properties of the material over time. Forty years after preparation, "hot" luminescence spectra in gallium phosphide (GaP) are similar to those for nanocrystals. The aged pure and N-doped crystals exhibit stimulated emission at 300 K. The aged GaP:N:Sm at room temperature generates bright green or yellow and red tunable luminescence. These results correlate with Raman light scattering and microhardness data obtained from the same crystals.
引用
收藏
页码:640 / 646
页数:7
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