Microstructural study of Fe-implanted SiC: Comparison of different post-implantation treatments

被引：3

作者：

Declemy, A. ^{[1
]}

Dupeyrat, C. ^{[1
]}

Thome, L. ^{[2
]}

Debelle, A. ^{[2
]}

机构：

[1] Univ Poitiers, CNRS, Phys Mat Lab, F-86962 Futuroscope, France

[2] Univ Paris 11, CNRS, IN2P3, CSNSM, F-91405 Orsay, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

silicon carbide; diluted magnetic semiconductor; ion implantation; defects; swift heavy ion irradiation; x-ray diffraction; Rutherford Backscattering Spectroscopy; SILICON-CARBIDE; FERROMAGNETISM;

D O I：

10.4028/www.scientific.net/MSF.615-617.461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide (SiC) could be I good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on the microstructure of Fe-implanted 6H-SiC subsequently submitted to Rapid Thermal Annealing (RTA), laser processing in the solid phase and swift heavy ion irradiation and analyzed by means of X-ray diffraction (XRD) and Rutherford backscattering and channeling (RBS/C).

引用

页码：461 / 464

页数：4

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