Tunable middle infrared radiation with HgGa2S4 crystal (vol 259, pg 868, 2006)

被引：4

作者：

Das, S. ^{[1
]}

Chatterjee, U.

Ghosh, C.

Gangopadhyay, S.

Andreev, Yu M.

Lanskii, G.

Badikov, V. V.

机构：

[1] Univ Burdwan, Dept Phys, Laser Lab, Burdwan 713104, W Bengal, India

[2] Inst Monitoring Climate & Ecol Syst, Tomsk 634055, Russia

[3] Kuban State Univ, Krasnodar 350751, Russia

来源：

关键词：

D O I：

10.1016/j.optcom.2006.04.003

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：352 / 352

页数：1

共 4 条

[1]

ANDREEV SA, 1980, SOV J QUANTUM ELECTR, V10, P1157

[2]

Badikov V. V., 1979, Soviet Journal of Quantum Electronics, V9, P1068, DOI 10.1070/QE1979v009n08ABEH009420

[3] Tunable middle infrared radiation with HgGa2S4 crystal [J].

Das, S ;

Chatterjee, U ;

Ghosh, C ;

Gangopadhyay, S ;

Andreev, YM ;

Lanskii, G ;

Badikov, VV .

[4] NONLINEAR OPTICAL SUSCEPTIBILITY OF HGGA2S4/4 [J].

LEVINE, BF ;

BETHEA, CG ;

KASPER, HM ;

THIEL, FA .