Crystallography of self-assembled DySi2 nanowires on a Si substrate

被引：10
作者：
Qiu, Dong [1 ]
Zhang, Ming-Xing [1 ]
Kelly, Patrick M. [1 ]
机构：
[1] Univ Queensland, Sch Engn, Div Mat, St Lucia, Qld 4072, Australia
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期
基金：
澳大利亚研究理事会;
关键词：
dysprosium alloys; elemental semiconductors; epitaxial layers; nanowires; self-assembly; silicon; silicon alloys; thermodynamic properties; EDGE MATCHING MODEL; SILICIDE; SI(001);
D O I：
10.1063/1.3085772
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A recently developed crystallographic model, edge-to-edge matching, has been used to interpret the crystallographic features of self-assembled DySi2 nanowires on Si substrates. All of the observed orientation relationships (ORs) and interface orientations of the DySi2 on Si(111), (001), and (110) were predicted by one criterion. The calculated results are fully consistent with the previous high-resolution transmission electron microscopy observations. The preference for each OR and interface was discussed in terms of the competition between thermodynamics and kinetic factors. This model can also be used in other epitaxy systems and has strong potential for future nanostructure design.
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页数：3
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