共 17 条
[1]
Hot carrier reliability of N-LDMOS transistor arrays for power BiCMOS applications
[J].
40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,
2002,
:105-110
[2]
Chen J, 2005, PROCEEDINGS OF 2005 INTERNATIONAL CONFERENCE ON MACHINE LEARNING AND CYBERNETICS, VOLS 1-9, P560
[3]
Time-dependent drain- and source-series resistance of high-voltage lateral diffused metal-oxide-semiconductor field-effect transistors during hot-carrier stress
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
2003, 42 (2A)
:409-413
[4]
HERER GR, 1989, ASHA REPORT, V17, P1
[5]
HOWER PL, 2005, P INT REL PHYS S, P545
[7]
Optimization of safe-operating-area using two peaks of body-current in submicron LDMOS transistors
[J].
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS,
2001,
:287-290
[8]
LUDIKHUIZE AW, 1997, P ISPSD, P53
[9]
MANHAS SK, 2000, P IEEE INT REL PHYS, P108
[10]
Hot-electron-induced degradation in high-voltage submicron DMOS transistors
[J].
ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS,
1996,
:65-68