Fluence-dependent sputtering yield of micro-architectured materials

被引:15
作者
Matthes, Christopher S. R. [1 ]
Ghoniem, Nasr M. [1 ]
Li, Gary Z. [1 ]
Matlock, Taylor S. [1 ]
Goebel, Dan M. [1 ]
Dodson, Chris A. [1 ]
Wirz, Richard E. [1 ]
机构
[1] Univ Calif Los Angeles, Mech & Aerosp Engn Dept, 420 Westwood Plaza, Los Angeles, CA 90095 USA
关键词
Sputtering; Argon plasma; Micro-architecture; Self-healing; Ion-surface interaction; Surface roughness; ENERGY-DEPENDENCE; EMPIRICAL-FORMULA; ION; MOLYBDENUM; MORPHOLOGY; EROSION;
D O I
10.1016/j.apsusc.2017.02.140
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present an experimental examination of the relationship between the surface morphology of Mo and its instantaneous sputtering rate as function of low-energy plasma ion fluence. We quantify the dynamic evolution of nano/micro features of surfaces with built-in architecture, and the corresponding variation in the sputtering yield. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed, and re-growth of surface layers is confirmed. This provides a self-healing mechanism of microarchitectured surfaces during plasma exposure. A variety of material characterization techniques are used to show that the sputtering yield is not a fundamental property, but that it is quantitatively related to the initial surface architecture and to its subsequent evolution. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is roughly 1/2 of the corresponding value for flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22 +/- 5%, converging to 0.4 +/- 5% at high fluence. The sputtering yield exhibits a transient behavior as function of the integrated ion fluence, reaching a steady-state value that is independent of initial surface conditions. A phenomenological model is proposed to explain the observed transient sputtering phenomenon, and to show that the saturation fluence is solely determined by the initial surface roughness. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:223 / 235
页数:13
相关论文
共 25 条
[21]   AN EMPIRICAL-FORMULA FOR ANGULAR-DEPENDENCE OF SPUTTERING YIELDS [J].
YAMAMURA, Y .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1984, 80 (1-2) :57-72
[22]   THEORETICAL-STUDIES ON AN EMPIRICAL-FORMULA FOR SPUTTERING YIELD AT NORMAL INCIDENCE [J].
YAMAMURA, Y ;
MATSUNAMI, N ;
ITOH, N .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 71 (1-2) :65-86
[23]   Energy dependence of ion-induced sputtering yields from monatomic solids at normal incidence [J].
Yamamura, Y ;
Tawara, H .
ATOMIC DATA AND NUCLEAR DATA TABLES, 1996, 62 (02) :149-253
[24]   REDUCTION OF ION SPUTTERING YIELD BY SPECIAL SURFACE MICROTOPOGRAPHY [J].
ZIEGLER, JF ;
CUOMO, JJ ;
ROTH, J .
APPLIED PHYSICS LETTERS, 1977, 30 (06) :268-271
[25]  
Zoerb K. A., 2005, 29 INT EL PROP C 200, P2005