Memristor-based voltage-controlled relaxation oscillators

被引：34
作者：
Fouda, M. E. [1 ]
Radwan, A. G. [2 ]
机构：
[1] Cairo Univ, Dept Engn Math, Fac Engn, Giza, Egypt
[2] Nile Univ, Nanoelect Integrated Syst Ctr, Cairo, Egypt
来源：
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2014年 / 42卷 / 10期
关键词：
memristor; memristor-based oscillator; relaxation oscillator; memristive circuits; VCO; DEVICES;
D O I：
10.1002/cta.1907
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper introduces two voltage-controlled memristor-based reactance-less oscillators with analytical and circuit simulations. Two different topologies which are R-M and M-R are discussed as a function of the reference voltage where the generalized formulas of the oscillation frequency and conditions for oscillation for each topology are derived. The effect of the reference voltage on the circuit performance is studied and validated through different examples using PSpice simulations. A memristor-based voltage-controlled oscillator (VCO) is introduced as an application for the proposed circuits which is nano-size and more efficient compared to the conventional VCOs. Copyright (C) 2013 John Wiley & Sons, Ltd.
引用
收藏
页码：1092 / 1102
页数：11
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