INTEGRATION OF DISTRIBUTED GE ISLANDS ONTO SI WAFERS BY ADHESIVE WAFER BONDING AND LOW-TEMPERATURE GE EXFOLIATION

被引：0

作者：

Forsberg, F. ^{[1
]}

Roxhed, N. ^{[1
]}

Colinge, C. ^{[2
]}

Stemme, G. ^{[1
]}

Niklaus, F. ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Micro & Nanosyst, Stockholm, Sweden

[2] Calif State Univ Sacramento, Sacramento, CA 95819 USA

来源：

2015 28TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2015) | 2015年

关键词：

SILICON; PHOTODETECTORS; DIE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel and highly efficient wafer-level batch transfer process for populating silicon (Si) wafers with distributed islands of thin single-crystalline germanium (Ge) layers. This is achieved by transferring Ge from a Si wafer containing thick Ge dies to a Si target wafer by adhesive wafer-bonding and subsequent low-temperature Ge exfoliation.

引用

页码：280 / 283

页数：4

共 12 条

[1] Thin-film III-V photodetectors integrated on silicon-on-insulator photonic ICs
Brouckaert, Joost
Roelkens, Gunther
Van Thourhout, Dries
Baets, Roel
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2007, 25 (04) : 1053 - 1060
[2] Low temperature exfoliation process in hydrogen-implanted germanium layers
Ferain, I. P.
Byun, K. Y.
Colinge, C. A.
Brightup, S.
Goorsky, M. S.
[J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
[3] CMOS-Integrated Si/SiGe Quantum-Well Infrared Microbolometer Focal Plane Arrays Manufactured With Very Large-Scale Heterogeneous 3-D Integration
Forsberg, Fredrik
Lapadatu, Adriana
Kittilsland, Gjermund
Martinsen, Stian
Roxhed, Niclas
Fischer, Andreas C.
Stemme, Goran
Samel, Bjorn
Ericsson, Per
Hoivik, Nils
Bakke, Thor
Bring, Martin
Kvisteroy, Terje
Ror, Audun
Niklaus, Frank
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (04) : 1 - 11
[4] Batch Transfer of Radially Expanded Die Arrays for Heterogeneous Integration Using Different Wafer Sizes
Forsberg, Fredrik
Roxhed, Niclas
Haraldsson, Tommy
Liu, Yitong
Stemme, Goran
Niklaus, Frank
[J]. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2012, 21 (05) : 1077 - 1083
[5] GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
Gassenq, A.
Gencarelli, F.
Van Campenhout, J.
Shimura, Y.
Loo, R.
Narcy, G.
Vincent, B.
Roelkens, G.
[J]. OPTICS EXPRESS, 2012, 20 (25): : 27297 - 27303
[6] Wafer-Level Heterogeneous Integration for MOEMS, MEMS, and NEMS
Lapisa, Martin
Stemme, Goran
Niklaus, Frank
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (03) : 629 - 644
[7] High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits
Liang, D.
Bowers, J. E.
Oakley, D. C.
Napoleone, A.
Chapman, D. C.
Chen, C. -L.
Juodawlkis, P. W.
Raday, O.
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (04) : H101 - H104
[8] Adhesive wafer bonding
Niklaus, F
Stemme, G
Lu, JQ
Gutmann, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (03)
[9] Low-temperature full wafer adhesive bonding
Niklaus, F
Enoksson, P
Kälvesten, E
Stemme, G
[J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2001, 11 (02) : 100 - 107
[10] III-V/Si photonics by die to wafer bonding
Roelkens, G.
Van Campenhout, J.
Brouckaert, J.
Van Thourhout, D.
Baets, R.
Romeo, P. Rojo
Regreny, P.
Kazmierczak, A.
Seassal, C.
Letartre, X.
Hollinger, G.
Fedeli, J. M.
Di Cioccio, L.
Lagahe-Blanchard, C.
[J]. MATERIALS TODAY, 2007, 10 (7-8) : 36 - 43

← 1 2 →