High resolution and high sensitivity CMOS PANEL SENSORS for X-ray

The CMOS panel sensors developed for detecting high quality X-ray images, feature high resolution and sensitivity, large area. The purpose of this study was to assess the performances of imager have a diagonal size of 7 inches (non-tiled monolithic chip) and made of monocrystalline silicon optimized for use in digital radiography associated with two kind of thallium doped cesium iodide scintillator. The XM09D has 50 um pixels, 2400 x 2400 pixel array (5,760,000 pixels) features high resolution of 8 1p/mm with single pixel drive. The XM08D has 100 um pixels, 1248x1248 pixel array delivers in a high frame rate of 30 frames/sec achieved by means of 4x4 binning readout. Both sensors utilize an FSP (flipped scintillator plate) made from high resolution, high luminance CsI crystals grown into a needle structure and coupled to a photodiode array for indirect detection of X-ray images. Furthermore, needle structure CA was directly deposited upon the sensor chip to accomplish optimum resolution. The CsI scintillation spectrum well matches the spectral response range of the large formatted photodiode array. These image sensors are manufactured in a standard CMOS process rule allowing a high fill factor of 79 % for the XM09D and 87 % for the XM08D. The monolithic amplifier blocks have 2400 channels of charge amplifiers with internal CDS (correlated double sampling) circuit has an optimal design, yielding a high gain of 1.07 uV per electron and a data transfer speed of 23 M bytes per second in sufficient low noise.