Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition

被引：2

作者：

Vikharev, A. L. ^{[1
]}

Bogdanov, S. A. ^{[1
]}

Ovechkin, N. M. ^{[1
]}

Ivanov, O. A. ^{[1
]}

Radishev, D. B. ^{[1
]}

Gorbachev, A. M. ^{[1
]}

Lobaev, M. A. ^{[1
]}

Vul, A. Ya. ^{[2
]}

Dideikin, A. T. ^{[2
]}

Kraev, S. A. ^{[1
]}

Korolev, S. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Fed Res Ctr Inst Appl Phys, Nizhnii Novgorod 603950, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 01期

关键词：

nanocrystalline diamond; thin diamond films; electrical properties of films;

D O I：

10.1134/S106378262101019X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Undoped nanocrystalline diamond (NCD) films less than 1 mu m thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600 degrees C for one hour.

引用

页码：66 / 75

页数：10

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