Nature of gap states in GeSbTe phase change memory materials

被引：7

作者：

Yu, X. ^{[1
]}

Robertson, J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

CANADIAN JOURNAL OF PHYSICS | 2014年 / 92卷 / 7-8期

关键词：

AMORPHOUS-SEMICONDUCTORS; DATA-STORAGE; VALENCE-ALTERNATION; MODEL; CRYSTALLINE; SIMULATION; RESONANCE; SELENIUM; DEFECTS;

D O I：

10.1139/cjp-2013-0531

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have calculated the states associated with valence alternation pair defects in a Te-rich amorphous GeTe random network. Two-fold Te sites and four-fold Ge sites are found to introduce states that are resonant with the valence and conduction bands, respectively. The system has a band gap, but these defect states are in the same energy range as those found by modulated photocurrent experiments. The absence of electron spin resonance signals is still not explained.

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页码：671 / 674

页数：4

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