Ambipolar conductivity in organic field-effect transistors based on 1, 7-bis(9-ethyl-3-carbazoly1) N,N′-2-ethyl hexyl perylene bisimide under the light illumination

被引：3

作者：

Cherpak, V. ^{[1
]}

Stakhira, P. ^{[1
]}

Volynyuk, D. ^{[1
,3
]}

Politanskiy, L. ^{[2
]}

Kus, N. ^{[1
]}

Reghu, R. R. ^{[3
]}

Grazulevicius, J. V. ^{[3
]}

机构：

[1] Lviv Polytech Natl Univ, UA-79013 Lvov, Ukraine

[2] Yu Fedkovich Univ, UA-58012 Chernovtsy, Ukraine

[3] Kaunas Univ Technol, Dept Organ Technol, LT-50254 Kaunas, Lithuania

来源：

OPTICAL MATERIALS | 2014年 / 36卷 / 09期

关键词：

Organic field effect transistor; Ambipolar; Photosensitivity; EMITTING-DIODES; SEMICONDUCTORS; TRANSPORT; INJECTION;

D O I：

10.1016/j.optmat.2014.04.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The occurrence of light induced ambipolar conductivity in organic transistors based on 1,7-bis(9-ethyl-3-carbazoly1) N,N'-2-ethyl hexyl perylene bisimide (BCEHPB) was studied. It is shown that under illumination the output characteristics are transformed into superposition of standard saturated behavior for one carrier at high gate voltage and a superlinear current increase at low gate voltage and high source-drain voltage due to injection of the opposite (hole) carrier. The influence of injection of holes from metal electrodes by impedance spectroscopy barrier structure BCEHPB/Ag was studied to explain this effect. Increasing the injection of holes in the transistor under illumination can be interpreted as a result of the devastation of the interface trap states. (C) 2014 Elsevier B.V. All rights reserved.

引用

收藏

页码：1511 / 1514

页数：4

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