Nonlinear Faraday effect near the fundamental absorption edge in the ferromagnetic semiconductor CdCr2Se4

被引：3
作者：
Golik, LL
Kunkova, ZE
机构：
[1] Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 141120 Fryazino, Moscow District
来源：
JETP LETTERS | 1997年 / 66卷 / 06期
关键词：
D O I：
10.1134/1.567534
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A sharp increase of the Faraday rotation with increasing incident radiation power is observed in a band near the fundamental absorption edge of the ferromagnetic semiconductor CdCr2Se4. The magnitude of the effect is a nonmonotonic function of the radiation intensity. The effect is explained by narrowing of an excitonic resonance as a result of screening of the internal electric fields by photoexcited carriers. (C) 1997 American Institute of Physics.
引用
收藏
页码：437 / 441
页数：5
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