Improvement of dislocation density in thick CVD single crystal diamond films by coupling H2/O2 plasma etching and chemo-mechanical or ICP treatment of HPHT substrates

被引：57

作者：

Achard, J. ^{[1
]}

Tallaire, A. ^{[1
]}

Mille, V. ^{[1
]}

Naamoun, M. ^{[1
]}

Brinza, O. ^{[1
]}

Boussadi, A. ^{[1
]}

William, L. ^{[1
]}

Gicquel, A. ^{[1
]}

机构：

[1] Univ Paris 13, Sorbonne Paris Cite, Lab Sci Proc & Mat, CNRS,UPR 3407, F-93430 Villetaneuse, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 10期

关键词：

chemical vapor deposition; diamond; surface treatment; extended defects; dislocations; plasma etching; GROWTH; MORPHOLOGIES; DEPOSITION;

D O I：

10.1002/pssa.201431181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

H-2/O-2 plasma treatments offer advantages over other etching processes of diamond as a technique to prepare the substrate's surface prior to homoepitaxial CVD diamond growth particularly in the case of thick films. It allows removing surface defects induced by polishing, thus leading to an improved morphology and limiting the stress within the grown crystal. Nevertheless, this treatment induces surface roughness leading to dislocation formation when CVD growth is initiated. In this paper we combined H-2/O-2 plasma etching with smoother surface treatment such as RIE-ICP etching or Chemo-Mechanical Polishing and we showed a significant reduction in dislocation density of the thick CVD epitaxial layers. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2264 / 2267

页数：4

共 16 条

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