Andreev-Coulomb Drag in Coupled Quantum Dots

被引:12
|
作者
Tabatabaei, S. Mojtaba [1 ]
Sanchez, David [2 ]
Yeyati, Alfredo Levy [3 ,4 ]
Sanchez, Rafael [3 ,4 ]
机构
[1] Shahid Beheshti Univ GC Evin, Dept Phys, Tehran 1983963113, Iran
[2] UIB CSIC, Inst Cross Disciplinary Phys & Complex Syst IFISC, E-07122 Palma De Mallorca, Spain
[3] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain
[4] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain
关键词
Andreev process - Coupled quantum dots - Electron-hole asymmetry - Low temperatures - Sign inversion - Single particle - Strong coupling - Superconducting lead;
D O I
10.1103/PhysRevLett.125.247701
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The Coulomb drag effect has been observed as a tiny current induced by both electron-hole asymmetry and interactions in normal coupled quantum dot devices. In the present work we show that the effect can be boosted by replacing one of the normal electrodes by a superconducting one. Moreover, we show that at low temperatures and for sufficiently strong coupling to the superconducting lead, the Coulomb drag is dominated by Andreev processes, is robust against details of the system parameters, and can be controlled with a single gate voltage. This mechanism can be distinguished from single-particle contributions by a sign inversion of the drag current.
引用
收藏
页数:6
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