Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

被引：104

作者：

Nomura, Kazushiro ^{[1
]}

Goto, Ken ^{[2
]}

Togashi, Rie ^{[1
]}

Murakami, Hisashi ^{[1
]}

Kumagai, Yoshinao ^{[1
]}

Kuramata, Akito ^{[2
]}

Yamakoshi, Shigenobu ^{[2
]}

Koukitu, Akinori ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[2] Tamura Corp, Sayama, Saitama 3501328, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 405卷

关键词：

Thermodynamic analysis; Halide vapor phase epitaxy; Oxides; Gallium compounds; Semiconducting III-VI materials; SINGLE-CRYSTALS; LAYERS; GAN;

D O I：

10.1016/j.jcrysgro.2014.06.051

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

beta-Ga2O3 growth by halide vapor phase epitaxy (HVPE) was investigated by thermodynamic analysis. Gad l and O-2 were determined to be appropriate precursors for the growth of beta-Ga2O3 by HVPE. When H-2 is not included in the carrier gas, growth is expected up to 1600 degrees C. However, with an increase of H-2 in the carrier gas, the driving force of Ga2O3 growth decreases. Stable growth at 1000 degrees C in an inert carrier gas requires an input VI/III ratio above 1. Experimental results for the homoepitaxial growth of beta-Ga2O3 using GaCl and O-2 as precursors and N-2 as a carrier gas show that beta-Ga2O3 growth by HVPE can be thermodynamically controlled. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：19 / 22

页数：4

共 22 条

[1]

Chase M., 1998, NIST-JANAF Thermochemical Tables, V1

[2] Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments [J].

Fujii, Tetsuo ;

Yoshii, Naoki ;

Kumagai, Yoshinao ;

Koukitu, Akinori .

JOURNAL OF CRYSTAL GROWTH, 2011, 314 (01) :108-112

[3] Bulk GaN crystals grown by HVPE [J].

Fujito, Kenji ;

Kubo, Shuichi ;

Nagaoka, Hirobumi ;

Mochizuki, Tae ;

Namita, Hideo ;

Nagao, Satoru .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :3011-3014

[4] Czochralski growth and characterization of β-Ga2O3 single crystals [J].

Galazka, Z. ;

Uecker, R. ;

Irmscher, K. ;

Albrecht, M. ;

Klimm, D. ;

Pietsch, M. ;

Bruetzam, M. ;

Bertram, R. ;

Ganschow, S. ;

Fornari, R. .

CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (12) :1229-1236

[5]

Gurvich L.V., 1994, THERMODYNAMIC PROPER, V3

[6] Development of gallium oxide power devices [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (01) :21-26

[7] Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2012, 100 (01)

[8] Thermodynamic analysis of various types of hydride vapor phase epitaxy system for high-speed growth of InN [J].

Kikuchi, Jun ;

Nishizawa, Yuuki ;

Murakami, Hisashi ;

Kumagai, Yoshinao ;

Koukitu, Akinori .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (42-45) :L1203-L1205

[9]

Knacke O., 1991, Thermochemical Properties of Inorganic Substances, V2

[10] Thermodynamic analysis of hydride vapor phase epitaxy of GaN [J].

Koukitu, A ;

Hama, S ;

Taki, T ;

Seki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3A) :762-765

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